• IR (Infineon Technologies)
• SPI11N60C3XKSA1
• Discrete Semiconductor Products
• SPI11N60C3 - 600V COOLMOS N-CHAN
•  SPI11N60C3XKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity205
• DescriptionN-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C11A (Tc)
• Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
• Power Dissipation (Max)125W (Tc)
• Vgs(th) (Max) @ Id3.9V @ 500µA
• Supplier Device PackagePG-TO262-3-1
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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• QUOTE
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• QC PROCESS
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