• IR (Infineon Technologies)
• IPA80R650CEXKSA2
• Discrete Semiconductor Products
• MOSFET N-CH 800V 8A TO220-3F
•  IPA80R650CEXKSA2 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature-40°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C8A (Ta)
• Rds On (Max) @ Id, Vgs650mOhm @ 5.1A, 10V
• Power Dissipation (Max)33W (Tc)
• Vgs(th) (Max) @ Id3.9V @ 470µA
• Supplier Device PackageTO-220-3F
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)800 V
• Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V

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