• IR (Infineon Technologies)
• IPP076N15N5AKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 150V 112A TO220-3
•  IPP076N15N5AKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 150 V 112A (Tc) 214W (Tc) Through Hole PG-TO220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C112A (Tc)
• Rds On (Max) @ Id, Vgs7.6mOhm @ 56A, 10
• Power Dissipation (Max)214W (Tc)
• Vgs(th) (Max) @ Id4.6V @ 160µA
• Supplier Device PackagePG-TO220-3
• Drive Voltage (Max Rds On, Min Rds On)8V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)150 V
• Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds4700 pF @ 75 V

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