• Zetex Semiconductors (Diodes Inc.)
• DMWSH120H28SM4Q
• Discrete Semiconductor Products
• SIC MOSFET BVDSS: >1000V TO247-4
•  DMWSH120H28SM4Q Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerZetex Semiconductors (Diodes Inc.)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole TO-247-4
• Package / CaseTO-247-4
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiC (Silicon Carbide Junction Transistor)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Tc)
• Rds On (Max) @ Id, Vgs28.5mOhm @ 50A, 15V
• Power Dissipation (Max)429W (Tc)
• Vgs(th) (Max) @ Id3.6V @ 17.7mA
• Supplier Device PackageTO-247-4
• GradeAutomotive
• Drive Voltage (Max Rds On, Min Rds On)15V
• Vgs (Max)+19V, -8V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs156.3 nC @ 15 V
• QualificationAEC-Q101

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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