• Vishay / Siliconix
• SIRA10BDP-T1-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 30V 30A/60A PPAK SO8
•  SIRA10BDP-T1-GE3 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 30 V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8
• Package / CasePowerPAK® SO-8
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C30A (Ta), 60A (Tc)
• Rds On (Max) @ Id, Vgs3.6mOhm @ 10A, 10V
• Power Dissipation (Max)5W (Ta), 43W (Tc)
• Vgs(th) (Max) @ Id2.4V @ 250µA
• Supplier Device PackagePowerPAK® SO-8
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)+20V, -16V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs36.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 15 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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