• Vishay / Siliconix
• IRF530SPBF
• Discrete Semiconductor Products
• MOSFET N-CH 100V 14A TO263
•  IRF530SPBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C14A (Tc)
• Rds On (Max) @ Id, Vgs160mOhm @ 8.4A, 10V
• Power Dissipation (Max)3.7W (Ta), 88W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds670 pF @ 25 V

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