• Vishay / Siliconix
• IRFBF30PBF
• Discrete Semiconductor Products
• MOSFET N-CH 900V 3.6A TO220AB
•  IRFBF30PBF Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 900 V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
• Rds On (Max) @ Id, Vgs3.7Ohm @ 2.2A, 10V
• Power Dissipation (Max)125W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-220AB
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)900 V
• Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

VIEW ALL

• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT