• Vishay / Siliconix
• SIHB24N65E-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 650V 24A D2PAK
•  SIHB24N65E-GE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 650 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C24A (Tc)
• Rds On (Max) @ Id, Vgs145mOhm @ 12A, 10V
• Power Dissipation (Max)250W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2740 pF @ 100 V

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