• Vishay / Siliconix
• SIHU4N80AE-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 800V 4.3A IPAK
•  SIHU4N80AE-GE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity3000
• DescriptionN-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
• Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
• Rds On (Max) @ Id, Vgs1.27Ohm @ 2A, 10V
• Power Dissipation (Max)69W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageIPAK (TO-251)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)800 V
• Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds622 pF @ 100 V

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