• Vishay / Siliconix
• IRFBC30ASPBF
• Discrete Semiconductor Products
• MOSFET N-CH 600V 3.6A D2PAK
•  IRFBC30ASPBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 3.6A (Tc) 74W (Tc) Surface Mount TO-263 (D2PAK)
• Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
• Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
• Power Dissipation (Max)74W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 250µA
• Supplier Device PackageTO-263 (D2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V

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