• Toshiba Electronic Devices and Storage Corporation
• TW015N120C,S1F
• Discrete Semiconductor Products
• G3 1200V SIC-MOSFET TO-247 15MO
•  TW015N120C,S1F Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 100A (Tc) 431W (Tc) Through Hole TO-247
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature175°C
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Tc)
• Rds On (Max) @ Id, Vgs20mOhm @ 50A, 18V
• Power Dissipation (Max)431W (Tc)
• Vgs(th) (Max) @ Id5V @ 11.7mA
• Supplier Device PackageTO-247
• Drive Voltage (Max Rds On, Min Rds On)18V
• Vgs (Max)+25V, -10V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs158 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 800 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT