• Toshiba Electronic Devices and Storage Corporation
• TK31E60W,S1VX
• Discrete Semiconductor Products
• MOSFET N-CH 600V 30.8A TO220
•  TK31E60W,S1VX Datasheet
• 

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• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-220
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
• Rds On (Max) @ Id, Vgs88mOhm @ 15.4A, 10V
• Power Dissipation (Max)230W (Tc)
• Vgs(th) (Max) @ Id3.7V @ 1.5mA
• Supplier Device PackageTO-220
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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