• Toshiba Electronic Devices and Storage Corporation
• TK6R8A08QM,S4X
• Discrete Semiconductor Products
• UMOS10 TO-220SIS 80V 6.8MOHM
•  TK6R8A08QM,S4X Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
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• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 80 V 58A (Tc) 41W (Tc) Through Hole TO-220SIS
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature175°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C58A (Tc)
• Rds On (Max) @ Id, Vgs6.8mOhm @ 29A, 10V
• Power Dissipation (Max)41W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 500µA
• Supplier Device PackageTO-220SIS
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)80 V
• Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 40 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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