• Toshiba Electronic Devices and Storage Corporation
• TK10A60W,S4VX
• Discrete Semiconductor Products
• MOSFET N-CH 600V 9.7A TO220SIS
•  TK10A60W,S4VX Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
• Rds On (Max) @ Id, Vgs380mOhm @ 4.9A, 10V
• Power Dissipation (Max)30W (Tc)
• Vgs(th) (Max) @ Id3.7V @ 500µA
• Supplier Device PackageTO-220SIS
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds700 pF @ 300 V

VIEW ALL

• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT