• YAGEO XSEMI
• XP10NA011J
• Discrete Semiconductor Products
• MOSFET N-CH 100V 48.5A TO251S
•  XP10NA011J Datasheet
• 

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• AttributesAttribute Value
• ManufacturerYAGEO XSEMI
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity80
• DescriptionN-Channel 100 V 48.5A (Tc) 1.13W (Ta), 50W (Tc) Through Hole TO-251S
• Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C48.5A (Tc)
• Rds On (Max) @ Id, Vgs11mOhm @ 30A, 10V
• Power Dissipation (Max)1.13W (Ta), 50W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-251S
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2288 pF @ 80 V

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