• Vishay / Siliconix
• SIZ200DT-T1-GE3
• Discrete Semiconductor Products
• MOSFET 2N-CH 30V 22A 8POWERPAIR
•  SIZ200DT-T1-GE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionMosfet Array 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)
• Package / Case8-PowerWDFN
• Mounting TypeSurface Mount
• Configuration2 N-Channel (Dual)
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• Power - Max4.3W (Ta), 33W (Tc)
• Drain to Source Voltage (Vdss)30V
• Current - Continuous Drain (Id) @ 25°C22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds1510pF @ 15V, 1600pF @ 15V
• Rds On (Max) @ Id, Vgs5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs28nC @ 10V, 30nC @ 10V
• Vgs(th) (Max) @ Id2.4V @ 250µA
• Supplier Device Package8-PowerPair® (3.3x3.3)

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