• Vishay / Siliconix
• SISS02DN-T1-GE3
• Discrete Semiconductor Products
• MOSFET N-CH 25V 51A/80A PPAK
•  SISS02DN-T1-GE3 Datasheet
• 

• Cost Reduction
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• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 25 V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
• Package / CasePowerPAK® 1212-8S
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C51A (Ta), 80A (Tc)
• Rds On (Max) @ Id, Vgs1.2mOhm @ 15A, 10V
• Power Dissipation (Max)5W (Ta), 65.7W (Tc)
• Vgs(th) (Max) @ Id2.2V @ 250µA
• Supplier Device PackagePowerPAK® 1212-8S
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)+16V, -12V
• Drain to Source Voltage (Vdss)25 V
• Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds4450 pF @ 10 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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