• Vishay / Siliconix
• IRFD9020PBF
• Discrete Semiconductor Products
• MOSFET P-CH 60V 1.6A 4DIP
•  IRFD9020PBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity100
• DescriptionP-Channel 60 V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
• Package / Case4-DIP (0.300", 7.62mm)
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
• Rds On (Max) @ Id, Vgs280mOhm @ 960mA, 10V
• Power Dissipation (Max)1.3W (Ta)
• Vgs(th) (Max) @ Id4V @ 1µA
• Supplier Device Package4-HVMDIP
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V

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• QC PROCESS
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