• Vishay / Siliconix
• IRFPG30PBF
• Discrete Semiconductor Products
• MOSFET N-CH 1000V 3.1A TO247-3
•  IRFPG30PBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity25
• DescriptionN-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-247AC
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
• Rds On (Max) @ Id, Vgs5Ohm @ 1.9A, 10V
• Power Dissipation (Max)125W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-247AC
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)1000 V
• Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds980 pF @ 25 V

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