• Vishay / Siliconix
• SI4102DY-T1-E3
• Discrete Semiconductor Products
• MOSFET N-CH 100V 3.8A 8SO
•  SI4102DY-T1-E3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity2500
• DescriptionN-Channel 100 V 3.8A (Tc) 2.4W (Ta), 4.8W (Tc) Surface Mount 8-SOIC
• Package / Case8-SOIC (0.154", 3.90mm Width)
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
• Rds On (Max) @ Id, Vgs158mOhm @ 2.7A, 10V
• Power Dissipation (Max)2.4W (Ta), 4.8W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device Package8-SOIC
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds370 pF @ 50 V

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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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