• Vishay / Siliconix
• SI2315BDS-T1-E3
• Discrete Semiconductor Products
• MOSFET P-CH 12V 3A SOT23-3
•  SI2315BDS-T1-E3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionP-Channel 12 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
• Package / CaseTO-236-3, SC-59, SOT-23-3
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C3A (Ta)
• Rds On (Max) @ Id, Vgs50mOhm @ 3.85A, 4.5V
• Power Dissipation (Max)750mW (Ta)
• Vgs(th) (Max) @ Id900mV @ 250µA
• Supplier Device PackageSOT-23-3 (TO-236)
• Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
• Vgs (Max)±8V
• Drain to Source Voltage (Vdss)12 V
• Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds715 pF @ 6 V

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