• Vishay / Siliconix
• SI2367DS-T1-BE3
• Discrete Semiconductor Products
• P-CHANNEL 20-V (D-S) MOSFET
•  SI2367DS-T1-BE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionP-Channel 20 V 2.8A (Ta), 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
• Package / CaseTO-236-3, SC-59, SOT-23-3
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeP-Channel
• Current - Continuous Drain (Id) @ 25°C2.8A (Ta), 3.8A (Tc)
• Rds On (Max) @ Id, Vgs66mOhm @ 2.5A, 4.5V
• Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
• Vgs(th) (Max) @ Id1V @ 250µA
• Supplier Device PackageSOT-23-3 (TO-236)
• Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
• Vgs (Max)±8V
• Drain to Source Voltage (Vdss)20 V
• Gate Charge (Qg) (Max) @ Vgs23 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds561 pF @ 10 V

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