• Vishay / Siliconix
• SI3460BDV-T1-BE3
• Discrete Semiconductor Products
• N-CHANNEL 20-V (D-S) MOSFET
•  SI3460BDV-T1-BE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity3000
• DescriptionN-Channel 20 V 6.7A (Ta), 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
• Package / CaseSOT-23-6 Thin, TSOT-23-6
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C6.7A (Ta), 8A (Tc)
• Rds On (Max) @ Id, Vgs27mOhm @ 5.1A, 4.5V
• Power Dissipation (Max)2W (Ta), 3.5W (Tc)
• Vgs(th) (Max) @ Id1V @ 250µA
• Supplier Device Package6-TSOP
• Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
• Vgs (Max)±8V
• Drain to Source Voltage (Vdss)20 V
• Gate Charge (Qg) (Max) @ Vgs24 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds860 pF @ 10 V

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• RFQ
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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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