• Vishay / Siliconix
• IRFR014PBF-BE3
• Discrete Semiconductor Products
• MOSFET N-CH 60V 7.7A DPAK
•  IRFR014PBF-BE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity75
• DescriptionN-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
• Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
• Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
• Power Dissipation (Max)2.5W (Ta), 25W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-252AA
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V

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• QC PROCESS
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