• Vishay / Siliconix
• IRFBC20PBF-BE3
• Discrete Semiconductor Products
• MOSFET N-CH 600V 2.2A TO220AB
•  IRFBC20PBF-BE3 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerVishay / Siliconix
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 600 V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
• Rds On (Max) @ Id, Vgs4.4Ohm @ 1.3A, 10V
• Power Dissipation (Max)50W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-220AB
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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