• Toshiba Electronic Devices and Storage Corporation
• TPN4R303NL,L1Q
• Discrete Semiconductor Products
• MOSFET N-CH 30V 40A 8TSON
•  TPN4R303NL,L1Q Datasheet
• 

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• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity5000
• DescriptionN-Channel 30 V 40A (Tc) 700mW (Ta), 34W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
• Package / Case8-PowerVDFN
• Mounting TypeSurface Mount
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C40A (Tc)
• Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V
• Power Dissipation (Max)700mW (Ta), 34W (Tc)
• Vgs(th) (Max) @ Id2.3V @ 200µA
• Supplier Device Package8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs14.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 15 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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