• Toshiba Electronic Devices and Storage Corporation
• TK39J60W,S1VQ
• Discrete Semiconductor Products
• MOSFET N-CH 600V 38.8A TO3P
•  TK39J60W,S1VQ Datasheet
• 

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• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity25
• DescriptionN-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
• Package / CaseTO-3P-3, SC-65-3
• Mounting TypeThrough Hole
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C38.8A (Ta)
• Rds On (Max) @ Id, Vgs65mOhm @ 19.4A, 10V
• Power Dissipation (Max)270W (Tc)
• Vgs(th) (Max) @ Id3.7V @ 1.9mA
• Supplier Device PackageTO-3P(N)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 300 V

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