• Toshiba Electronic Devices and Storage Corporation
• TPN1200APL,L1Q
• Discrete Semiconductor Products
• PB-F POWER MOSFET TRANSISTOR TSO
•  TPN1200APL,L1Q Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity5000
• DescriptionN-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
• Package / Case8-PowerVDFN
• Mounting TypeSurface Mount
• Operating Temperature175°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C40A (Tc)
• Rds On (Max) @ Id, Vgs11.5mOhm @ 20A, 10V
• Power Dissipation (Max)630mW (Ta), 104W (Tc)
• Vgs(th) (Max) @ Id2.5V @ 300µA
• Supplier Device Package8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1855 pF @ 50 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT