• Toshiba Electronic Devices and Storage Corporation
• TPW5200FNH,L1Q
• Discrete Semiconductor Products
• PB-F POWER MOSFET TRANSISTOR DSO
•  TPW5200FNH,L1Q Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity5000
• DescriptionN-Channel 250 V 26A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
• Package / Case8-PowerWDFN
• Mounting TypeSurface Mount
• Operating Temperature150°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C26A (Tc)
• Rds On (Max) @ Id, Vgs52mOhm @ 13A, 10V
• Power Dissipation (Max)800mW (Ta), 142W (Tc)
• Vgs(th) (Max) @ Id4V @ 1mA
• Supplier Device Package8-DSOP Advance
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)250 V
• Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 100 V

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• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT