• Toshiba Electronic Devices and Storage Corporation
• TPN2R903PL,L1Q
• Discrete Semiconductor Products
• MOSFET N-CH 30V 70A 8TSON
•  TPN2R903PL,L1Q Datasheet
• 

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• AttributesAttribute Value
• ManufacturerToshiba Electronic Devices and Storage Corporation
• CategoryDiscrete Semiconductor Products
• PackagesTape & Reel (TR)
• Standard Quantity5000
• DescriptionN-Channel 30 V 70A (Tc) 630mW (Ta), 75W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
• Package / Case8-PowerVDFN
• Mounting TypeSurface Mount
• Operating Temperature175°C
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C70A (Tc)
• Rds On (Max) @ Id, Vgs2.9mOhm @ 35A, 10V
• Power Dissipation (Max)630mW (Ta), 75W (Tc)
• Vgs(th) (Max) @ Id2.1V @ 200µA
• Supplier Device Package8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)30 V
• Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 15 V

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• RFQ
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• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
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