• STMicroelectronics
• STW10NK80Z
• Discrete Semiconductor Products
• MOSFET N-CH 800V 9A TO247-3
•  STW10NK80Z Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSTMicroelectronics
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 800 V 9A (Tc) 160W (Tc) Through Hole TO-247-3
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C9A (Tc)
• Rds On (Max) @ Id, Vgs900mOhm @ 4.5A, 10V
• Power Dissipation (Max)160W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 100µA
• Supplier Device PackageTO-247-3
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)800 V
• Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds2180 pF @ 25 V

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• QUOTE
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• QC PROCESS
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