• Sanyo Semiconductor/onsemi
• FDPF4D5N10C
• Discrete Semiconductor Products
• MOSFET N-CH 100V 128A TO220F
•  FDPF4D5N10C Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSanyo Semiconductor/onsemi
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity1000
• DescriptionN-Channel 100 V 128A (Tc) 2.4W (Ta), 37.5W (Tc) Through Hole TO-220F-3
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C128A (Tc)
• Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
• Power Dissipation (Max)2.4W (Ta), 37.5W (Tc)
• Vgs(th) (Max) @ Id4V @ 310µA
• Supplier Device PackageTO-220F-3
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds5065 pF @ 50 V

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