• Sanyo Semiconductor/onsemi
• FQI7N60TU
• Discrete Semiconductor Products
• MOSFET N-CH 600V 7.4A I2PAK
•  FQI7N60TU Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSanyo Semiconductor/onsemi
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity1000
• DescriptionN-Channel 600 V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole TO-262 (I2PAK)
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C7.4A (Tc)
• Rds On (Max) @ Id, Vgs1Ohm @ 3.7A, 10V
• Power Dissipation (Max)3.13W (Ta), 142W (Tc)
• Vgs(th) (Max) @ Id5V @ 250µA
• Supplier Device PackageTO-262 (I2PAK)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)600 V
• Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1430 pF @ 25 V

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