• Sanyo Semiconductor/onsemi
• NVH4L080N120SC1
• Discrete Semiconductor Products
• SICFET N-CH 1200V 29A TO247-4
•  NVH4L080N120SC1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerSanyo Semiconductor/onsemi
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L
• Package / CaseTO-247-4
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C29A (Tc)
• Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
• Power Dissipation (Max)170W (Tc)
• Vgs(th) (Max) @ Id4.3V @ 5mA
• Supplier Device PackageTO-247-4L
• GradeAutomotive
• Drive Voltage (Max Rds On, Min Rds On)20V
• Vgs (Max)+25V, -15V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs56 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 800 V
• QualificationAEC-Q101

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