• ROHM Semiconductor
• RCX220N25
• Discrete Semiconductor Products
• MOSFET N-CH 250V 22A TO220FM
•  RCX220N25 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerROHM Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity500
• DescriptionN-Channel 250 V 22A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM
• Package / CaseTO-220-3 Full Pack
• Mounting TypeThrough Hole
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C22A (Tc)
• Rds On (Max) @ Id, Vgs140mOhm @ 11A, 10V
• Power Dissipation (Max)2.23W (Ta), 40W (Tc)
• Vgs(th) (Max) @ Id5V @ 1mA
• Supplier Device PackageTO-220FM
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±30V
• Drain to Source Voltage (Vdss)250 V
• Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 25 V

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• QC PROCESS
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