• IR (Infineon Technologies)
• IRF530NL
• Discrete Semiconductor Products
• MOSFET N-CH 100V 17A TO262
•  IRF530NL Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 100 V 17A (Tc) 3.8W (Ta), 70W (Tc) Through Hole TO-262
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C17A (Tc)
• Rds On (Max) @ Id, Vgs90mOhm @ 9A, 10V
• Power Dissipation (Max)3.8W (Ta), 70W (Tc)
• Vgs(th) (Max) @ Id4V @ 250µA
• Supplier Device PackageTO-262
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V

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