• IR (Infineon Technologies)
• IRFU4510PBF
• Discrete Semiconductor Products
• MOSFET N-CH 100V 56A IPAK
•  IRFU4510PBF Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity75
• DescriptionN-Channel 100 V 56A (Tc) 143W (Tc) Through Hole IPAK (TO-251AA)
• Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C56A (Tc)
• Rds On (Max) @ Id, Vgs13.9mOhm @ 38A, 10V
• Power Dissipation (Max)143W (Tc)
• Vgs(th) (Max) @ Id4V @ 100µA
• Supplier Device PackageIPAK (TO-251AA)
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds3031 pF @ 50 V

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