• IR (Infineon Technologies)
• IPI65R190C6XKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 650V 20.2A TO262-3
•  IPI65R190C6XKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
• Rds On (Max) @ Id, Vgs190mOhm @ 7.3A, 10V
• Power Dissipation (Max)151W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 730µA
• Supplier Device PackagePG-TO262-3
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1620 pF @ 100 V

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