• IR (Infineon Technologies)
• IPP048N12N3GXKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 120V 100A TO220-3
•  IPP048N12N3GXKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 120 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Tc)
• Rds On (Max) @ Id, Vgs4.8mOhm @ 100A, 10V
• Power Dissipation (Max)300W (Tc)
• Vgs(th) (Max) @ Id4V @ 230µA
• Supplier Device PackagePG-TO220-3-1
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)120 V
• Gate Charge (Qg) (Max) @ Vgs182 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 60 V

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• QC PROCESS
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