• IR (Infineon Technologies)
• IPP075N15N3GXKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 150V 100A TO220-3
•  IPP075N15N3GXKSA1 Datasheet
• 

• Cost Reduction
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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 150 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
• Package / CaseTO-220-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Tc)
• Rds On (Max) @ Id, Vgs7.5mOhm @ 100A, 10V
• Power Dissipation (Max)300W (Tc)
• Vgs(th) (Max) @ Id4V @ 270µA
• Supplier Device PackagePG-TO220-3
• Drive Voltage (Max Rds On, Min Rds On)8V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)150 V
• Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds5470 pF @ 75 V

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• QUOTE
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• QC PROCESS
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