• IR (Infineon Technologies)
• IPI045N10N3GXKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 100V 100A TO262-3
•  IPI045N10N3GXKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Tc)
• Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
• Power Dissipation (Max)214W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 150µA
• Supplier Device PackagePG-TO262-3
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds8410 pF @ 50 V

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