• IR (Infineon Technologies)
• IMW65R039M1HXKSA1
• Discrete Semiconductor Products
• SILICON CARBIDE MOSFET, PG-TO247
•  IMW65R039M1HXKSA1 Datasheet
• 

• Cost Reduction
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• 365 Days Warranty
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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 650 V 46A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C46A (Tc)
• Rds On (Max) @ Id, Vgs50mOhm @ 25A, 18V
• Power Dissipation (Max)176W (Tc)
• Vgs(th) (Max) @ Id5.7V @ 7.5mA
• Supplier Device PackagePG-TO247-3-41
• Drive Voltage (Max Rds On, Min Rds On)18V
• Vgs (Max)+20V, -2V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs41 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds1393 pF @ 400 V

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• RFQ
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• QUOTE
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• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
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