• IR (Infineon Technologies)
• IRF150P221AKMA1
• Discrete Semiconductor Products
• MOSFET N-CH 150V 186A TO247-3
•  IRF150P221AKMA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity25
• DescriptionN-Channel 150 V 186A (Tc) 3.8W (Ta), 341W (Tc) Through Hole PG-TO247-3
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C186A (Tc)
• Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
• Power Dissipation (Max)3.8W (Ta), 341W (Tc)
• Vgs(th) (Max) @ Id4.6V @ 264µA
• Supplier Device PackagePG-TO247-3
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)150 V
• Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 75 V

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