• IR (Infineon Technologies)
• IPW60R024CFD7XKSA1
• Discrete Semiconductor Products
• MOSFET N-CH 650V 77A TO247-3-41
•  IPW60R024CFD7XKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 650 V 77A (Tc) 320W (Tc) Through Hole PG-TO247-3-41
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C77A (Tc)
• Rds On (Max) @ Id, Vgs24mOhm @ 42.4A, 10V
• Power Dissipation (Max)320W (Tc)
• Vgs(th) (Max) @ Id4.5V @ 2.12mA
• Supplier Device PackagePG-TO247-3-41
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs183 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds7268 pF @ 400 V

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