• IR (Infineon Technologies)
• IMZA65R048M1HXKSA1
• Discrete Semiconductor Products
• MOSFET 650V NCH SIC TRENCH
•  IMZA65R048M1HXKSA1 Datasheet
• 

• Cost Reduction
• Min Order From 1 PCS
• 365 Days Warranty
• 12 Hours Quotation

• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-4-3
• Package / CaseTO-247-4
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C39A (Tc)
• Rds On (Max) @ Id, Vgs64mOhm @ 20.1A, 18V
• Power Dissipation (Max)125W (Tc)
• Vgs(th) (Max) @ Id5.7V @ 6mA
• Supplier Device PackagePG-TO247-4-3
• Drive Voltage (Max Rds On, Min Rds On)18V
• Vgs (Max)+23V, -5V
• Drain to Source Voltage (Vdss)650 V
• Gate Charge (Qg) (Max) @ Vgs33 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds1118 pF @ 400 V

VIEW ALL

• RFQ
  Source at least two reliable suppliers
• QUOTE
  Information checking available/price/condition
• QC PROCESS
  3-Step Quality Control and Professional Third-Party Test
• SHIPMENT
  FedEx, DHL, UPS, TNT