• IR (Infineon Technologies)
• IPI90R500C3XKSA2
• Discrete Semiconductor Products
• MOSFET N-CH 900V 11A TO262-3
•  IPI90R500C3XKSA2 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity500
• DescriptionN-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C11A (Tc)
• Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
• Power Dissipation (Max)156W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 740µA
• Supplier Device PackagePG-TO262-3-1
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)900 V
• Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 100 V

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