• IR (Infineon Technologies)
• IPI072N10N3G
• Discrete Semiconductor Products
• OPTLMOS N-CHANNEL POWER MOSFET
•  IPI072N10N3G Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesBulk
• Standard Quantity289
• DescriptionN-Channel 100 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C80A (Tc)
• Rds On (Max) @ Id, Vgs7.2mOhm @ 80A, 10V
• Power Dissipation (Max)150W (Tc)
• Vgs(th) (Max) @ Id3.5V @ 90µA
• Supplier Device PackagePG-TO262-3-1
• Drive Voltage (Max Rds On, Min Rds On)6V, 10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)100 V
• Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds4910 pF @ 50 V

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