• IR (Infineon Technologies)
• IMW120R220M1HXKSA1
• Discrete Semiconductor Products
• SICFET N-CH 1.2KV 13A TO247-3
•  IMW120R220M1HXKSA1 Datasheet
• 

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• AttributesAttribute Value
• ManufacturerIR (Infineon Technologies)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity30
• DescriptionN-Channel 1200 V 13A (Tc) 75W (Tc) Through Hole PG-TO247-3-41
• Package / CaseTO-247-3
• Mounting TypeThrough Hole
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C13A (Tc)
• Rds On (Max) @ Id, Vgs286mOhm @ 4A, 18V
• Power Dissipation (Max)75W (Tc)
• Vgs(th) (Max) @ Id5.7V @ 1.6mA
• Supplier Device PackagePG-TO247-3-41
• Drive Voltage (Max Rds On, Min Rds On)15V, 18V
• Vgs (Max)+23V, -7V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds289 pF @ 800 V

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