• Intersil (Renesas Electronics Corporation)
• N0603N-S23-AY
• Discrete Semiconductor Products
• MOSFET N-CH 60V 100A TO262
•  N0603N-S23-AY Datasheet
• 

• Cost Reduction
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• 365 Days Warranty
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• AttributesAttribute Value
• ManufacturerIntersil (Renesas Electronics Corporation)
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity500
• DescriptionN-Channel 60 V 100A (Ta) 1.5W (Ta), 156W (Tc) Through Hole TO-262
• Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting TypeThrough Hole
• Operating Temperature150°C (TJ)
• TechnologyMOSFET (Metal Oxide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C100A (Ta)
• Rds On (Max) @ Id, Vgs4.6mOhm @ 50A, 10V
• Power Dissipation (Max)1.5W (Ta), 156W (Tc)
• Supplier Device PackageTO-262
• Drive Voltage (Max Rds On, Min Rds On)10V
• Vgs (Max)±20V
• Drain to Source Voltage (Vdss)60 V
• Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds7730 pF @ 25 V

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• QUOTE
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• QC PROCESS
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