• GeneSiC Semiconductor
• G3R350MT12J
• Discrete Semiconductor Products
• SIC MOSFET N-CH 11A TO263-7
•  G3R350MT12J Datasheet
• 

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• AttributesAttribute Value
• ManufacturerGeneSiC Semiconductor
• CategoryDiscrete Semiconductor Products
• PackagesTube
• Standard Quantity50
• DescriptionN-Channel 1200 V 11A (Tc) 75W (Tc) Surface Mount TO-263-7
• Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting TypeSurface Mount
• Operating Temperature-55°C ~ 175°C (TJ)
• TechnologySiCFET (Silicon Carbide)
• FET TypeN-Channel
• Current - Continuous Drain (Id) @ 25°C11A (Tc)
• Rds On (Max) @ Id, Vgs420mOhm @ 4A, 15V
• Power Dissipation (Max)75W (Tc)
• Vgs(th) (Max) @ Id2.69V @ 2mA
• Supplier Device PackageTO-263-7
• Drive Voltage (Max Rds On, Min Rds On)15V
• Vgs (Max)±15V
• Drain to Source Voltage (Vdss)1200 V
• Gate Charge (Qg) (Max) @ Vgs12 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds334 pF @ 800 V

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